List of Publications (1994 ~ )

Paper


[1] A. Kohno, N. Aomine, Y. Soejima, and A. Okazaki, "Anomalous Behaviour of Silicon Single-Crystals Observed by X-ray Diffraction", Japanese Journal of Applied Physics, vol. 33, No. 9A, pp. 5073-5077, 1994.

[2] T. Sameshima, M. Sekiya, M. Hara, N. Sano, and A. Kohno, "Reduction of Defects in Laser-Induced Crystallized and Amorphized Silicon Films using Plasma Hydrogenation", Journal of Applied Physics, vol. 76, No. 11, pp. 7377-7382, 1994.

[3] T. Sameshima, A. Kohno, M Sekiya, N. Sano, and M. Hara, "SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors",  Applied Physics Letters, vol. 64, No. 8, pp. 1018-1020, 1994.

[4] M. Sekiya, M. Hara, N. Sano, A. Kohno, and T. Sameshima, "High Performance Poly-Crystalline Silicon Thin Film Transistors Fabricated Using Remote Plasma Chemical Vapor Deposition of SiO2", IEEE Electron Device Letters, vol. 15, No. 2, pp. 69-71, 1994.

[5] T. Sameshima, A. Kohno, M. Sekiya, M. Hara, and N. Sano, "Improvement of Gate-Insulator/ Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors", Japanese Journal of Applied Physics, vol. 33, No. 6B, pp. L834-L836, 1994.

[6] N. Sano, A. Kohno, M. Hara, M. Sekiya, and T. Sameshima, "A New Technique for Diagnostics of A Radio-Frequency Parallel-Plate Remote Plasma", Applied Physics Letters, vol. 65, No. 2, pp. 162-164, 1994.

[7] A. Kohno, T. Sameshima, N. Sano, M. Sekiya, and M. Hara, "High Performance Poly-Si TFTs Fabricated Using Pulsed Laser Annealing and Remote Plasma CVD with Low Temperature Processing", IEEE Transactions on Electron Devices, vol. 42, No. 2, pp. 251-257, 1995.

[8] T. Sameshima, M. Sekiya, M Hara, N. Sano, and A. Kohno, "Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors", Materials Research Society Symposium Proceedings, vol.358, pp.927-932, 1995.

[9] Z. Lu, K. Munakata, A. Kohno, Y. Soejima, and A. Okazaki, "Structural relaxation in silicon at low temperatures", Materials Science & Engineering B, vol. B34, pp. 220-223, 1995.

[10] N. Sano, M. Sekiya, M. Hara, A. Kohno, and T. Sameshima, "Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere", Applied Physics Letters, vol. 66, No. 16, pp. 2107-2109, 1995.

[11] N. Sano, M. Sekiya, M. Hara, A. Kohno, and T. Sameshima, "High Quality SiO2/Si Interfaces of Poly-Crystalline Silicon Thin Film Transistors by Annealing in Wet Atmosphere", IEEE Electron Device Letters, vol. 16, No. 5, pp. 157-159, 1995.

[12] T. Sameshima, Y. Sunaga, and A. Kohno, "Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self- Heating", Japanese Journal of Applied Physics, vol. 35, pp. L308-L310, No. 3A, 1996.

[13] A. Kohno, Z. Lu, Y. Soejima, and A. Okazaki, "Effect of Uniaxial Stress on the Lattice Spacing of Silicon at Low Temperatures", Il Nuovo Cimento, vol. 19D, No. 2-4, pp. 293-298, 1997.

[14] Z. Lu, K. Munakata, A. Kohno, Y. Soejima and A. Okazaki, "High-Resolution X-Ray Diffraction of Silicon at Low Temperatures", Il Nuovo Cimento, vol. 19D, No. 2-4, pp. 305-311, 1997.

[15] K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, S. Miyazaki, and M. Hirose, "Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots", Japanese Journal of Applied Physics, vol. 36, No. 10A, pp. L1279-L1282, 1997.

[16] A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki, and M. Hirose, "Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors", Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials (Hamamatsu, 1997)  pp. 566-567.

[17] A. Kohno, S. Miyazaki, H. Murakami, M. Ikeda and M. Hirose, "Electron Charging to a Silicon-Quantum-Dots Floating Gate in MOS Structures", Extended Abstracts of The 3rd International Workshop on Quantum Functional Devices (Maryland, 1997)  pp. 99-100 (invited).

[18] 宮崎誠一,福田昌俊,柴和利,中川和之,廣瀬全孝,香野淳,“Si量子ドットの自己組織化形成と室温量子物性(招待論文),電子情報通信学会・信学技報,ED96-221 (1997)pp. 39-48,平成 9 (1997) 3 月.

[19] H. Deki, K. Nakagawa, A. Kohno, S. Miyazaki, and M. Hirose, "Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method", Japanese Journal of Applied Physics, vol. 37, No. 2, pp. 435- 439, 1998.

[20] M. Fukuda, W. Mizubayashi, A. Kohno, S. Miyazaki, and M. Hirose, "Analysis of Tunneling Current through Ultrathin Gate Oxides", Japanese Journal of Applied Physics, vol. 37, No. 12B, pp. L1534-L1536, 1998.

[21] A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki, and M. Hirose, "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures", Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials (Hiroshima, 1998)  pp. 174-175.

[22] S. Miyazaki, T. Maruyama, A. Kohno, M. Hirose, "Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy", Materials Science in Semiconductor Processing, vol. 2, pp. 185-190, 1999.

[23] S. Miyazaki, T. Maruyama, A. Kohno, and M. Hirose, "Photoelectron Yield Spectroscopy of Electronic states at ultrathin SiO2/Si interfaces", Microelectronic Engineering, vol. 48, pp. 63-66, 1999.

[24] S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno, and M. Hirose, "Luminescence Study of Self-Assembled, Silicon Quantum Dots", Materials Research Society Symposium Proceedings, vol. 536, pp.45-50, 1999.

[25] S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, and M. Hirose, "Self-Assembling of Silicon Quantum Dots and Its Application to Floating Gate Memory", Proc. of International Microprocesses and Nanotechnology Conference (Yokohama, 1999)  pp. 84-85.

[26] A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki, and M. Hirose, "Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories", Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials (Sendai, 2000)  pp. 124-125.

[27] A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki, and M. Hirose, "Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors", Japanese Journal of Applied Physics, vol. 40, No. 7B, pp. L721 -L723, 2001.

[28] A. Kohno, M. Ikeda, H. Murakami, S. Miyazaki, and M. Hirose, "Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs", Proceedings of the 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (Cheju-Do, Korea, 2001) pp. 105-109.

[29] A. Kohno and S. Miyazaki, "Self-Assembling of Si Quantum Dots and Its Application to Memory Devices", Bulletin of the Stefan University, vol. 13, No. 13, (La Jolla, 2001) pp. 33-36 (invited).

[30] M. Ikeda, E. Yoshida, A. Kohno, S. Miyazaki, and M. Hirose, "Charge Injection Characteristics of a Si Quantum Dot Floating Gate in MOS Structures", Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials (Tokyo, 2001) pp. 308-309.

[31] 香野淳,池田弥央,村上秀樹,宮崎誠一,廣瀬全孝,“Si量子ドットフローティングゲートMOS構造の電子注入特性とメモリ機能,電子情報通信学会・信学技報,ED2000-257, SDM2000-211pp. 103-1082001

[32] 香野淳,池田弥央,村上秀樹,宮崎誠一,廣瀬全孝,シリコン量子ドットを用いたメモリーデバイスの開発,応用物理,第71巻,第7号,pp. 864-8682002

[33] A. Kohno, H. Sakamoto, F. Ishitsu, and K. Matuo, “Crystallization of SrBi2Ta2O9 Thin Films on Silicon Substrates and Their Interface Structures”, Transactions of the Materials Research Society of Japan, vol. 28, No. 4, pp. 1203?1206, 2003.

[34] A. Kohno, F. Ishitsu, K. Matuo, and H. Tomari, “Crystallization of Sub-100 nm-Thick Bi4-xLaxTi3O12 Films on Silicon Substrates and Their Electrical Properties”, Materials Research Society Symposium Proceedings, vol. 784, pp. 497-502, 2004.

[35] A. Kohno, F. Ishitsu, and K. Matuo, “Structural and Electrical Properties of Bi4-xLaxTi3O12 Thin Films Formed on p-Si(100) Substrates”, Transactions of the Materials Research Society of Japan, vol. 29, No. 4, pp. 1365-1368, 2004.

[36] A. Kohno, H. Sakamoto, and K. Matuo, Crystallization and Structural Phase Transformation in Sub-100-nm-Thick SrBi2Ta2O9 Thin Film”, Japanese Journal of Applied Physics, vol. 44, No. 4A , pp. 1928-1931, 2005.

[37] H. Watakabe, T. Sameshima, T. Strutz, T. Oitome, and A. Kohno, Defect Reduction Treatment for Plasma?Tetraethylorthosilicate?SiO2 by High-Pressure H2O Vapor Heat Treatment”, Japanese Journal of Applied Physics, vol. 44, No. 12 , pp. 8367-8370, 2005.

[38] A. Kohno and H. Tomari, Electrical Properties of Au/ Bi4-xLaxTi3O12 Thin Film/Si Structures and Reduction of Interface States ”, Materials Research Society Symposium Proceedings, vol. 902E, pp. T03.45.1-6, 2006.

[39] 香野淳,西川武蔵,泊博幸,“Si基板上に形成した多結晶Bi4-xLaxTi3O12薄膜の容量-電圧(C-V)ヒステリシス特性と界面状態の評価,電子情報通信学会技術研究報告,vol. 106, No. 5, pp. 51-56, 2006.

[40] A. Kohno, “Structural and Electrical Study on Interface between Bi4-xLaxTi3O12 Thin Film and Si Substrate”, KEK Proceedings, vol. 2006-3, pp. 89-92, 2006.

[41] T. Tajiri and A. Kohno, “Preparation of Mesoporous Silica for Formation of Nanoparticle”, KEK Proceedings, vol. 2006-3, pp. 93-95, 2006.


[42] S.Kohiki, M.Sasaki, Y.Murakawa, K.Hori, K.Okada, H.Shimooka, T.Tajiri, H.Deguchi, S.Matsushima, M.Oku, T.Shishido, M.Arai, M.Mitome, Y.Bando "Doping of Fe to In2O3"Thin Solid Fillms 505 (2006) 122-125

[43] T.Tajiri, H.Deguchi, M.Mito, S.Takagi "Pressure-induced Magnetic Phase Transition and Structural Change in the Quantum Spin Liquid System Cu2(C5H12N2)2Br4"Journal of the Physical Society of Japan 75 (2006) 044708

[44] T.Tajiri, H.Deguchi, S.Kohiki, M.Mito, S.Takagi, K.Tsuda, Y.Murakami "Novel Size Effect of LaMnO3+δ Nanocrystals Embeded in SBA-15 Mesoporous Silica" Journal of the Physical Society of Japan Vol.75, No.11, p.113704 (2006)

[45] J. Kishine, T. Watanabe, H. Deguchi, M. Mito, T. Sakai, T. Tajiri, M. Yamashita, H. Miyasaka "Spin correlation and relaxational dynamics in molecular-based single-chain magnets" Physical Review B 74 (2006) 224419

[46] H. Kira, H. Tamura, Y. Ando, M. Onodera, Y. Murakami, S. Yamazaki, T. Tajiri, and H. Deguchi "Magnetic Properties of LaMnO3 Nanocrystal Encapsulated in MCM-41" AIP Conf. Proc. 850, (2006) 1157

[47] J. Ohshita, Y. Tada, A. Kunai, Y. Harima, A. Kohno, and Y. Kunugi, “Annealing effects of poly(3-hexylthiophene) films on the EL performance of ITO/polymer/Alq3/Mg-Ag devices.  Evidences for structure changes of the polymer layer on ITO by XRR analyses”, Synthetic Metals, vol. 157, pp. 104-108, 2007.


[48] T. Okajima, Y. Chikaura, Y. Suzuki, M. Tabata, Y. Soejima, K. Hara, R. Haruki, K. Nagata, N. Hiramatsu, A. Kohno, M. Takumi, H. Setoyama, and D. Yoshimura, " The Design and Performance of Beamline BL15 at SAGA Light Source ", AIP Conference Proceedings, SYNCHROTRON RADIATION INSTRUMENTATION, Ninth International Conference on Synchrotron Radiation Instrumentation, vol. 879, pp. 820-823, 2007.

[49] A. Kohno and K. Matuo, Interfacial Layer Formation during Crystallization of Sol-Gel Derived SrBi2Ta2O9 Thin Films on Silicon”, Transactions of the Materials Research Society of Japan, vol. 32, No. 1, pp. 255-258, March, 2007.

[50] T. Tajiri, K. Sumitani, R. Haruki, and A. Kohno, “Preferred Crystal Orientation of Sol-Gel Derived Bi4-xLaxTi3O12 Thin Films on Silicon Substrates”, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 54, No. 12, pp. 2574-2578, 2007.

[51] T.Tajiri, S.Matsumoto, H.Deguchi, M.Mito, S.Takagi, C.Moriyoshi, K.Itoh and K.Koyama "Effect of pressure on two-dimensional Heisenberg antiferromagnet Cu(HCOO)2・4H2O" J. Mag. Mag. Mater. 310 (2007) e566-e568

[52] M.Ogawa, M.Mito, T.Tajiri, H.Deguchi, S.Takagi, K.Nakata, M.Yamashita and H. Miyasaka "Pressure effects on Mn4 single-molecule magnet with two-demensiional correlation" J. Mag. Mag. Mater. 310 (2007) e489-e491

[53] H.Kira, H.Tamura, Y.Ando, M.Onodera, H.Nakao, Y.Murakami, K.Tsuda, H.Nojiri, K.Ohoyama, S.Yamazaki, T.Tajiri and H.Deguchi "magnetic properties of LaMnO3+δnanocrystal in MCM-41 mesoporous silica" J. Mag. Mag. Mater. 310 (2007) 2480-2482

[54] A. Kohno and T. Tajiri, “Formation of Preferred Orientation in Bi4-xLaxTi3O12 Thin Films on Si(100) During Crystallization”, Transactions of the Materials Research Society of Japan, vol. 33, No. 3, pp. 615-618, 2008.


[55] T. Tajiri, M. Harazono, T. Kitamura, H. Deguchi, S. Kohiki, M. Mito, A. Kohno, and S. Takagi, “Magnetic Properties of BiMnO3 Nanoparticles in SBA-15 Mesoporous Silica”, Proceedings of 25th International Conference on Low Temperature Physics, (Amsterdam, August 6-13, 2008), PC-Mo214_C8, 2008.

[56] T. Tajiri, H. Deguchi, S. Kohiki, M. Mito, S. Takagi, M. Mitome, Y. Murakami, and A. Kohno, “Phase Separation in La1-xSrxMnO3+d Nanocrystals Studied by Electron Spin Resonance”, Journal of the Physical Society of Japan, vol. 77, No. 7, July, pp. 074715_1-6 2008.


[57] M. Mito, N. Shinto, Y. Komorida, T. Tajiri, H. Deguchi, S. Takagi and S. Kohiki "Oxygen-molecule spin-nanotubes constructed by physisorption into a nanoporous medium" Physical Review B vol.78 pp. 064428 (2008).



Technical Report


[1] A. Kohno, H. Sakamoto, F. Ishitsu, K. Matuo, Y. Soejima, S. Nagao, K. Munakata, and T. Hiraoka, "Superstructure of La2-xSrxCuO4 in Superconducting State", KURRI Progress Report 2001 (The Research Reactor Institute, Kyoto University, 2002), p. 19, 2002.

[2] Y. Soejima, S. Nagao, K. Munakata, T. Hiraoka, A. Kohno and H. Sakamoto, "The Superstructure of SrTiO3 in Quantum Paraelectric State", KURRI Progress Report 2001 (The Research Reactor Institute, Kyoto University, 2002), p. 20, 2002.

[3] 香野淳強誘電体薄膜および薄膜/シリコン界面の構造とデバイス特性KEK Proceedingsvol. 2004-5pp. 73-752004

[4] 香野淳,坂元英雄,松尾和展“SrBi2Ta2O9薄膜の構造相変化とグレイン成長第21回強誘電体応用会議講演予稿集,vol. FMA-21pp. 203-2042004

[5] A. Kohno, T. Tajiri, K. Sumitani, and R. Haruki, “Investigation of Preferred Crystal Orientation of Sol-Gel Derived Bi4-xLaxTi3O12 Thin-Films on Silicon Substrates”, Photon Factory Activity Report 2006, #24, Part B, p.158, 2007.

[6] 香野淳,田尻恭之X線反射率解析を用いた薄膜構造評価合同シンポジウム「SAGAシンクロトロンとアカデミア」 講演予稿集 SAGA-SLS-0017(B)-2006-1p. 1052006

[7] 岡島敏浩,近浦吉則,鈴木芳文,田端正明,副島雄児,原一広,春木理恵,永田潔文,平松信康,香野淳,匠正治“SAGA-LS BL15の立ち上げ状況合同シンポジウム「SAGAシンクロトロンとアカデミア」 講演予稿集 SAGA-SLS-0017(B)-2006-1p. 1032006


Presentations at International Conferences


[1] A. Kohno, Z. Lu, Y. Soejima, and A. Okazaki, "Effect of Uniaxial Stress on the Lattice Spacing of Silicon at Low Temperatures," 3rd European Symposium on X-ray Topography and High Resolution Diffraction (Palermo, Italy, April 22-24, 1996).

[2] Z. Lu, K. Munakata, A. Kohno, Y. Soejima, and A. Okazaki, "High-Resolution X-Ray Diffraction of Silicon at Low Temperatures," 3rd European Symposium on X-ray Topography and High Resolution Diffraction (Palermo, Italy, April 22-24, 1996).

[3] A. Kohno, Z. Lu, Y. Soejima, and A. Okazaki, "Stress Relaxation in Silicon at Low Temperatures," 17th Congress for International Union of Crystallography (Seattle, August 8-17, 1996), Acta Cryst., vol. A52, p.456, 1997.

[4] K. Munakata, Z. Lu, A. Kohno, Y. Soejima, and A. Okazaki, "Lattice Symmetry of Silicon at Low Temperatures," 17th Congress for International Union of Crystallography (Seattle, August 8-17, 1996), Acta Cryst., vol. A52, p.456, 1997.

[5] A. Kohno, S. Miyazaki, H. Murakami, M. Ikeda, and M. Hirose, "Electron Charging to a Silicon-Quantum-Dots Floating Gate in MOS Structures," The 3rd International Workshop on Quantum Functional Devices (Maryland, November 5-7, 1997)  (invited).

[6] A. Kohno, M. Ikeda, H. Murakami, S. Miyazaki, and M. Hirose, "Fabrication and Characterization of MOS Capacitors with Self-Assembled Silicon Quantum Dots as a Floating Gate," 1997 Fall Meeting of Mat. Res. Soc. (Boston, December 1-5, 1997).

[7] A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki, and M. Hirose, "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures", the 1998 International Conference on Solid State Devices and Materials (Hiroshima, September 7-10, 1998).

[8] S. Miyazaki, K. Shiba, N. Etoh, A. Kohno and M. Hirose, "Luminescence Study of Self-Assembled, Silicon Quantum Dots", Material Research Society Symposium (Boston , Nov. 30 - Dec. 4, 1998).

[9] S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, and M. Hirose, "Self-Assembling Silicon Quantum Dots and Its Application to Floating Gate Memory", International  Microprocesses and Nanotechnology Conference (Yokohama, July 6-8, 1999).

[10] A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki, and M. Hirose, "Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures", Workshop on Silicon Nanofabrication and Nanodevices (Tokyo , September 18, 1999).


[11] A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki, and M. Hirose, "Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories", The 2000 International Conference on Solid State Devices and Materials (Sendai, August 29-31, 2000).

[12] A. Kohno, M. Ikeda, H. Murakami, S. Miyazaki, and M. Hirose, "Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs", The 2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (Cheju-Do, Korea, July 5-7, 2001).

[13] A. Kohno and S. Miyazaki, "Self-Assembling of Si Quantum Dots and Its Application to Memory Devices", Frontier Science Research Conferences: Silicon Materials (La Jolla, California, August 13-15, 2001)  (invited).

[14] M. Ikeda, E. Yoshida, A. Kohno, S. Miyazaki, and M. Hirose, "Charge Injection Characteristics of a Si Quantum Dot Floating Gate in MOS Structures", The 2001 International Conference on Solid State Devices and Materials (Tokyo, Sept. 26-28, 2001).

[15]
A. Kohno, H. Sakamoto, F. Ishitsu, and K. Matuo, "Crystallization of Sol-Gel-Derived Strontium-Bismuth-Tantalate Thin Films on Silicon Substrates", XIX Congress and General Assembly of The International Union of Crystallography  (Geneva, August 6-15, 2002), Acta Cryst., vol. A58 (Supplement), p. C348, 2002.


[16] A. Kohno, H. Sakamoto, F. Ishitsu, and K. Matuo, “Crystallization of SrBi2Ta2O9 Thin Films on Silicon Substrates and Their Interface Structures”, The 14th Symposium of The Materials Research Society of Japan (Tokyo, December 20-21, 2002), Program and Abstracts, p. 272, 2002.

[17] A. Kohno, F. Ishitsu, and K. Matuo, “Structural and Electrical Properties of Bi4-xLaxTi3O12 Thin Films Formed on p-Si(100) Substrates”, The 8th IUMRS International Conference on Advanced Materials (Yokohama, October 8-13, 2003), Abstracts 1, p. 212, 2003.

[18] A. Kohno, F. Ishitsu, K. Matuo, and H. Tomari, “Crystallization of Sub-100 nm-Thick Bi4-xLaxTi3O12 Films on Silicon Substrates and Their Electrical Properties”, 2003 Materials Research Society Fall Meeting, (Boston, December 1-5, 2003), abstracts, p. 84, 2003.

[19] A. Kohno and H. Tomari, “Electrical Properties of Au/ Bi4-xLaxTi3O12 Thin Film/Si Structures and Reduction of Interface States ”, 2005 Materials Research Society Fall Meeting, (Boston, November 27-December 1, 2005), abstracts T3.45, 2005.

[20] T. Okajima, Y. Chikaura, Y. Suzuki, M. Tabata, Y. Soejima, K. Hara, R. Haruki, K. Nagata, N. Hiramatsu, A. Kohno, M. Takumi, H. Setoyama, and D. Yoshimura, “The Design and Performance of Beamline BL15 at SAGA Light Source”, 9th International Conference on Synchrotron Radiation Instrumentation, (Daegu, Korea, May 28- June 3, 2006), EP-037.

[21] Y. Chikaura, T. Okajima, Y. Soejima, K. Hara, Y. Suzuki, N. Hiramatsu, A. Kohno, K. Nagata, H. Setoyama, D. Yoshimura, and M. Tabata, “First Experiment of A Structural Studies Beamline BL15 of A Compact Synchrotron Light Source (SAGA-LS) Newly Constructed with High Cost Performance”, The 55th Annual Denver X-ray Conference, (Denver, August 7-11, 2006), D085.

[22] T.Tajiri, S.Matsumoto, H.Deguchi, M.Mito, S.Takagi, C.Moriyoshi, K.Itoh and K.Koyama "Effect of pressure on two-dimensional Heisenberg antiferromagnet Cu(HCOO)2・4H2O" ICM2006-International Conference on Magnetism (August 20-25, 2006, Kyoto, Japan)

[23] M.Ogawa, M.Mito, T.Tajiri, H.Deguchi, S.Takagi, K.Nakata, M.Yamashita and H. Miyasaka "Pressure effects on Mn4 single-molecule magnet with two-demensiional correlation" ICM2006-International Conference on Magnetism (August 20-25, 2006, Kyoto, Japan)

[24] H.Kira, H.Tamura, Y.Ando, M.Onodera, H.Nakao, Y.Murakami, K.Tsuda, H.Nojiri, K.Ohoyama, S.Yamazaki, T.Tajiri and H.Deguchi "magnetic properties of LaMnO3+δnanocrystal in MCM-41 mesoporous silica" ICM2006-International Conference on Magnetism (August 20-25, 2006, Kyoto, Japan)


[25] S.Kohiki, S.Nishi, K.Okada, H.Shimooka, T.Tajiri, H.Deguchi, T.Ohno, H.Tanaka, T.Kawai, M.Mitome, Y.Bando, M.Oku, T.Shishido, "Room temperature ferromagnetism of Fe doped In2O3-δ and of Fe doped ITO based on phase separated nanoclusters", The Fifth International Conference on Inorganic Materials (Ljubljana, Slovenia, 2006 September)

[26] A. Kohno and T. Tajiri, “Improvement of Chemical Bonding States of Bi4-xLaxTi3O12 Thin Films by Post-Annealing and Characterization of interface layer at the Film/Si Substrate”, 2006 Materials Research Society Fall Meeting, (Boston, November 27-December 1, 2006), abstracts T7.11, 2006.

[27] T. Tajiri, K. Sumitani, R. Haruki, and A. Kohno, “Preferred Crystal Orientation of Sol-Gel Derived Bi4-xLaxTi3O12 Thin Films on Silicon Substrates”, The 16th International Symposium on the Application of Ferroelectrics (ISAF2007) (Nara, May 27-31, 2007), 29PS-A-28, 2007.


[28] A. Kohno and T. Tajiri, “Electronic States in Bi4-xLaxTi3O12 Thin Films and Film/Si Interfaces”, 2007 Materials Research Society Fall Meeting, (Boston, November 26-30, 2007), abstracts K10.50, 2007.

[29] J. Warrender, B. Bob, M. J. Aziz, S. Charnvanichborikarn, J. Williams, M. Tabbal, A. Kohno, “Chalcogen dopants for infrared optoelectronic Si”, 2008 American Physical Society March Meeting, (New Orleans, March 10-14, 2008), D19.00009, 2008.

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[1] 香野淳(分担執筆),「シリコン基板上への強誘電体薄膜の形成」,「X線反射率法入門」,社団法人・応用物理学会 埋もれた界面のX線・中性子解析グループ編,200711月発行,分担pp. 156-157


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